See what causes dishing
during copper CMP using

Version 4.4

Copper dishing is shown in the
movie to the right, which was generated using Mesa 4.4. There are four phases:

1 Planarization of copper structures

2 Bulk removal of planarized copper

3 "Over-polish," which is needed because there are other places on the wafer where the copper has not yet been cleared. That occurs because the polish process and/or the original copper thickness is not uniform across the wafer.

4 The Result: The copper is "dished out" because the slurry removes the copper faster than it removes the tantalum barrier layer.

"Erosion" of the oxide occurs next, after the tantalum barrier layer in the pattern is removed. All this and more can be studied and understood in Mesa 4.4.

Give your staff the
competitive edge
of CMP insight and knowledge.

Version 4.4

Now available from
Scott Runnels Consulting.

Using Mesa's physically-based model
of CMP, your staff can see and explore

  • The physics of pad-wafer interaction
  • How and when materials are cleared
  • How 3D patterns affect polish performance
  • Effects of multiple slurries, different pad properties, process variations, and much more

Nothing can replace actually watching the important CMP mechanisms at work. And only Mesa provides this information in an easy-to-use environment. Using Mesa yields insight that is difficult to gain any other way. Anyone involved in CMP can benefit from using it.

Mesa has been successfully validated on

  • Oxide,
  • Copper, and
  • STI processes.

Click here to find out more. Or forward
this to a colleague.

We appreciate your interest. Thank you!

Copyright 2002 Scott Runnels Consulting

Introduction to Mesa Video
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