during copper CMP using
Copper dishing is shown in
movie to the right, which was generated using Mesa 4.4. There are
Planarization of copper structures
Bulk removal of planarized copper
"Over-polish," which is needed because there are other places
on the wafer where the copper has not yet been cleared. That occurs
because the polish process and/or the original copper thickness is not
uniform across the wafer.
The Result: The copper is "dished out" because the slurry
removes the copper faster than it removes the tantalum barrier layer.
"Erosion" of the
oxide occurs next, after the tantalum barrier layer in the pattern is
removed. All this and more can be studied and understood in Mesa 4.4.
Give your staff the
of CMP insight and knowledge.
Now available from
Scott Runnels Consulting.
Using Mesa's physically-based
of CMP, your staff can see and explore
- The physics of pad-wafer
- How and when materials are
- How 3D patterns affect polish
- Effects of multiple slurries,
different pad properties, process variations, and much more
Nothing can replace actually
watching the important CMP mechanisms at work. And only Mesa provides
this information in an easy-to-use environment. Using Mesa yields insight
that is difficult to gain any other way. Anyone involved in CMP can benefit
from using it.
Mesa has been successfully
- Copper, and
- STI processes.
here to find out more. Or forward
this to a colleague.
We appreciate your interest.
Copyright 2002 Scott